IPD068P03L3G chatsopano chatsopano cha Electronic Components IC chip MCU BOM ntchito mu stock IPD068P03L3G
Makhalidwe a Zamalonda
TYPE | DESCRIPTION |
Gulu | Zogulitsa za Discrete Semiconductor |
Mfr | Malingaliro a kampani Infineon Technologies |
Mndandanda | OptiMOS™ |
Phukusi | Tape & Reel (TR) Dulani Tepi (CT) Digi-Reel® |
Mkhalidwe wa Zamalonda | Yogwira |
Mtundu wa FET | P-Channel |
Zamakono | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 v |
Panopa - Kukhetsa Kosalekeza (Id) @ 25°C | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.8mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id | 2V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
Vgs (Max) | ± 20V |
Input Capacitance (Ciss) (Max) @ Vds | 7720 pF @ 15 V |
Chithunzi cha FET | - |
Kutaya mphamvu (Max) | 100W (Tc) |
Kutentha kwa Ntchito | -55°C ~ 175°C (TJ) |
Mtundu Wokwera | Surface Mount |
Phukusi la chipangizo cha Supplier | Chithunzi cha PG-TO252-3 |
Phukusi / Mlandu | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Nambala Yoyambira Yogulitsa | IPD068 |
Documents & Media
ZOTHANDIZA TYPE | KULUMIKIZANA |
Datasheets | Chithunzi cha IPD068P03L3 |
Zolemba Zina Zofananira | Gawo Nambala Guide |
Zowonetsedwa | Data Processing Systems |
HTML Datasheet | Chithunzi cha IPD068P03L3 |
Zithunzi za EDA | IPD068P03L3GATMA1 yolembedwa ndi Ultra Library |
Zachilengedwe & Zogulitsa kunja
ATTRIBUTE | DESCRIPTION |
Mkhalidwe wa RoHS | ROHS3 yogwirizana |
Moisture Sensitivity Level (MSL) | 1 (Zopanda malire) |
REACH Status | FIKIRANI Osakhudzidwa |
Mtengo wa ECCN | NDI 99 |
HTSUS | 8541.29.0095 |
Zowonjezera Zowonjezera
ATTRIBUTE | DESCRIPTION |
Mayina Ena | Chithunzi cha IPD068P03L3GATMA1DKR Chithunzi cha IPD068P03L3GATMA1-ND SP001127838 Mtengo wa IPD068P03L3GATMA1CT Chithunzi cha IPD068P03L3GATMA1TR |
Phukusi lokhazikika | 2,500 |
Transistor
Transistor ndi achipangizo cha semiconductoramakonda kukulitsakapenakusinthazizindikiro zamagetsi ndimphamvu.Transistor ndi imodzi mwazomangamanga zamakonozamagetsi.[1]Amapangidwa ndisemiconductor zinthu, nthawi zambiri amakhala ndi atatuma terminalskulumikiza ku dera lamagetsi.AVotejikapenapanopaogwiritsidwa ntchito pawiri imodzi ya ma terminals a transistor amawongolera pano kudzera pa ma terminals ena.Chifukwa mphamvu zoyendetsedwa (zotulutsa) zimatha kukhala zapamwamba kuposa mphamvu zowongolera (zolowera), transistor imatha kukulitsa chizindikiro.Ma transistors ena amapakidwa payekhapayekha, koma ena ambiri amapezeka atalowetsedwamomabwalo ophatikizika.
Austria-Hungary wasayansi Julius Edgar Lilienfeldadapereka lingaliro la atransistor yamphamvumu 1926, koma sikunali kotheka kupanga chida chogwirira ntchito panthawiyo.[2]Chida choyamba chogwirira ntchito chomwe chinamangidwa chinali apoint-contact transistoranapangidwa mu 1947 ndi American physicsJohn BardeenndiWalter Brattainpamene ntchito pansiWilliam ShockleykuBell Labs.Atatuwo adagawana 1956Mphoto ya Nobel mu Fizikisichifukwa cha kupambana kwawo.[3]Mtundu wogwiritsidwa ntchito kwambiri wa transistor ndimetal-oxide-semiconductor field-effect transistor(MOSFET), yomwe idapangidwa ndiMohamed AtallandiDawon Kangku Bell Labs mu 1959.[4][5][6]Ma Transistors adasinthiratu gawo lamagetsi, ndikutsegulira njira zazing'ono komanso zotsika mtengowailesi,zowerengera,ndimakompyuta, mwa zina.
Ma transistors ambiri amapangidwa kuchokera ku zoyera kwambirisilicon, ndi ena kuchokeragermanium, koma zida zina za semiconductor nthawi zina zimagwiritsidwa ntchito.Transistor ikhoza kukhala ndi chonyamulira chamtundu umodzi wokha, mu transistor yogwira ntchito kumunda, kapena ikhoza kukhala ndi mitundu iwiri ya zonyamulira mubipolar junction transistorzipangizo.Poyerekeza ndivacuum chubu, ma transistors nthawi zambiri amakhala ang'onoang'ono ndipo amafuna mphamvu zochepa kuti agwire ntchito.Machubu ena a vacuum ali ndi zabwino kuposa ma transistors pama frequency okwera kwambiri kapena ma voltages okwera kwambiri.Mitundu yambiri ya transistors imapangidwa molingana ndi zomwe opanga angapo amapanga.